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Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data
INA-03170
Features
* Cascadable 50 Gain Block * Low Noise Figure: 2.5 dB Typical at 1.5 GHz * High Gain: 26.0 dB Typical at 1.5 GHz * 3 dB Bandwidth: DC to 2.8 GHz * Unconditionally Stable (k>1) * Low Power Dissipation * Hermetic Gold-Ceramic Surface Mount Package
feedback amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth commercial, industrial and military applications that require high gain and low noise IF or RF amplification with minimum power consumption. The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz f MAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
70 mil Package
Description
The INA-03170 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC)
Typical Biasing Configuration
VCC > 7 V RFC (Optional) Rbias (Required) Cblock RF IN 1 2 4 3 Vd = 4.5 V Cblock RF OUT
6-105
5965-9677E
INA-03170 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 25 mA 200 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 150C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6.7 mW/C for TC > 170C. 4. See MEASUREMENTS section "Thermal Resistance" for more information.
INA-03170 Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB ISO VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 12 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Reverse Isolation (|S12| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.01 to 2.0 GHz f = 0.01 to 2.0 GHz f = 0.01 to 2.0 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 1.5 GHz f = 0.01 to 2.0 GHz
Units
dB dB GHz dB
Min.
24.5
Typ.
28.0 0.5 2.8 37 2.0[3] 3.0[3]
Max.
30.0
dB dBm dBm psec V mV/C 4.0
2.5 1.0 10 200 5.3 + 5
3.0
6.0
Notes: 1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP). 3. VSWR can be improved by bypassing the bias directly to ground.
INA-03170 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 12 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.05 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 3.50
.35 .35 .34 .34 .33 .32 .32 .32 .31 .31 .30 .27 .15 .16 .28
178 176 172 164 158 152 147 141 133 125 117 106 94 159 150
26.6 26.6 26.6 26.5 26.4 26.3 26.2 26.2 26.3 26.5 26.8 26.9 26.6 23.7 19.8
21.48 21.42 21.37 21.19 20.91 20.69 20.48 20.40 20.73 21.15 21.84 22.20 21.48 15.32 9.81
-4 -7 -14 -28 -41 -54 -67 -80 -93 -106 -121 -138 -177 133 99 6-106
-35.9 -36.5 -36.5 -36.5 -38.4 -37.1 -36.5 -39.2 -37.7 -37.1 -35.4 -37.1 -35.4 -34.4 -35.4
.016 .015 .015 .015 .012 .014 .015 .011 .013 .014 .017 .014 .017 .019 .017
9 6 -1 -5 2 5 4 13 25 28 30 33 23 42 28
.56 .56 .56 .54 .53 .51 .50 .49 .48 .47 .46 .42 .31 .16 .19
-1 -4 -7 -13 -18 -22 -27 -32 -38 -45 -52 -62 -79 -72 -60
1.24 1.29 1.30 1.33 1.58 1.46 1.41 1.79 1.57 1.47 1.28 1.48 1.44 1.78 2.71
INA-03170 Typical Performance, TA = 25C
(unless otherwise noted)
30 Gain Flat to DC 20 25 4.0 5.0 25 TC = +125C TC = +25C TC = -55C 30 f = 0.1 - 2 GHz 25 f = 3 GHz
Id (mA)
NF (dB)
Id (mA)
15
Gp (dB)
20
3.0
20 f = 4 GHz 15
10
15
2.0
5
10 0.1
0.2
0.5
1.0
2.0
1.0 5.0
0 0 2 4 Vd (V) 6 8 10
10 5 10 15 Id (mA) 20 25
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25C, Id = 12 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
27
8 Gp 4 P1 dB 4 2
5.0
Gp (dB)
26 25 24 Id = 20 mA 4.0
P1 dB (dBm)
P1 dB (dBm)
Id = 12 mA 0 Id = 8 mA -4
NF (dB)
3.0
3.5
0 -2 NF
Id = 8 mA
NF (dB)
2.0 2.5 1.0 1.5 -55 -25 +25 +85
2.0
Id = 12 to 20 mA
+125
-8 0.1
0.2
0.5
1.0
2.0
5.0
1.0 0.1
0.2
0.5
1.0
2.0
5.0
TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 1.5 GHz, Id = 12 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
70 mil Package Dimensions
.040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3
2
GROUND
Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13
.004 .002 .10 .05
.070 1.70
.495 .030 12.57 .76
.035 .89
6-107

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